UF3SC120016K3S
UF3SC120016K3S 1200 V、16 mohm SiC FET 器件基于独特的级联电路配置,其中常开 SiC JFET 与 Si MOSFET 共同封装以产生常关 SiC F
UF3SC120016K3S 1200 V、16 mohm SiC FET 器件基于独特的级联电路配置,其中常开 SiC JFET 与 Si MOSFET 共同封装以产生常关 SiC FET 器件。该器件的标准栅极驱动特性允许使用现成的栅极驱动器,因此在更换 Si IGBT、Si 超级结器件或 SiC MOSFET 时需要最少的重新设计。该器件采用 TO-247-3L 封装,具有超低栅极电荷和出色的反向恢复特性,与推荐的 RC 缓冲器一起使用时非常适合开关电感负载,以及任何需要标准栅极驱动的应用。
主要特征
- 导通电阻 (RDS(on)):16 mohm(典型值)
- 最高工作温度:175 °C
- 优秀的反向恢复
- 低栅极电荷
- 低本征电容
- ESD 保护,HBM 等级 4
VDS 最大值(V) | 1,200 |
RDS(on) Typ @ 25C (mohm) | 16 |
内径最大值(A) | 107 |
一代 | 第 3 代 |
Tj 最大值(°C) | 175 |
汽车资质 | 是的 |
包装类型 | TO-247-3L |
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